CS19N40A8R mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.30Ω) l Low Gate Charge (Typical Data:42nC) l Low Reverse transfer capacitances(Typical:12.3pF) l 100% Single Pulse avalanch.
Power switch circuit of electron ballast and adaptor.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
.
VDSS
400
V
CS19N40 A8R, the silicon N-channel Enhanced ID
19
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
150
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.23
Ω
performance and enhance.
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