l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche e.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS20N60F A9R the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS20N60FA9H

CS20N60A8H

CS20N60A8R

CS20N60AND

CS20N60ANH

CS20N65A

CS20N65A1

CS20N65A2

CS20N65A3

CS20N65A6

CS20N65A7

CS20N65A8H

CS20N65ANH