CS230N06B0 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤3.6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power sw.
The package form is TO-263, which accords with the RoHS standard.
VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)T.
CS230N06 B0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load swit.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 429.87KB)