CS2837AND mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche e.
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rat.
VDSS
500
CS2837 AND, the silicon N-channel Enhanced ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃)
230
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.18
performance and enhance the avalanche.
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