CS28N50ANR mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤195mΩ)
* Low Gate Charge (Typical Data:83nC)
* Low Reverse transfer capacitances
* 100% Single Pulse .
Power switch circuit of electron ballast and adaptor.
500
V
28
A
312.5
W
150
mΩ
Absolute（Tc= 25℃ unless other.
CS28N50 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transisto.
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