l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data: 18.8nC) l Low Reverse transfer capacitances(Typical: 0.9pF) l 100% Single Pulse avalanc.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating .

CS2N100 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 1000 2 140 5.7 performance and enhance the avalanche energy.

CS2N100A4R

CS2N100D

CS2N100F

CS2N100P

CS2N100U

CS2N10AS-G

CS2N15AE-1

CS2N50A4R

CS2N60

CS2N60A23H

CS2N60A3H

CS2N60A4H

CS2N60A4HY