* Superior switching performance
* Low on resistance(Rdson≤6Ω)
* Low gate charge (Typical Data:7.9nC)
* Low reverse transfer capacitances(Typical:2.2.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS2N50 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS2N100A3R

CS2N100A4R

CS2N100D

CS2N100F

CS2N100P

CS2N100U

CS2N10AS-G

CS2N15AE-1

CS2N60

CS2N60A23H

CS2N60A3H

CS2N60A4H

CS2N60A4HY