l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanch.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS3N20 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS3N20A23H

CS3N20A4H

CS3N20ATH

CS3N25

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N30B23H

CS3N40A23

CS3N40A3H

CS3N40A4H

CS3N50B3

CS3N50B3HY

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