* Fast Switching
* Low ON Resistance(Rdson≤6.0Ω)
* Low Gate Charge (Typical Data:19.7 nC)
* Low Reverse transfer capacitances(Typical:2.2 pF)
* .

Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/d.

CS3N120 A0R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p.

CS3N120A3R

CS3N120A4R

CS3N120A8R

CS3N120AHR

CS3N120FA9R

CS3N150A0R

CS3N150AHR

CS3N150AKR

CS3N150FA9R

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H