l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanc.

Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/d.

CS3N120 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow.

CS3N120A0R-G

CS3N120A3R

CS3N120A4R

CS3N120AHR

CS3N120FA9R

CS3N150A0R

CS3N150AHR

CS3N150AKR

CS3N150FA9R

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H