* Fast Switching
* Low ON Resistance(Rdson≤6.5Ω)
* Low Gate Charge (Typical Data: 37.6nC)
* Low Reverse transfer capacitances(Typical:2.8pF)
* 1.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter Rating V.

CS3N150 AHR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 1500 3 32 5.0 performance and enhance the avalanche energy..

CS3N150A0R

CS3N150AKR

CS3N150FA9R

CS3N120A0R-G

CS3N120A3R

CS3N120A4R

CS3N120A8R

CS3N120AHR

CS3N120FA9R

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H