l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data: 37.6nC) l Low Reverse transfer capacitances(Typical:2.8 pF) l 100% Single Pulse avalanc.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS3N150F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS3N150A0R

CS3N150AHR

CS3N150AKR

CS3N120A0R-G

CS3N120A3R

CS3N120A4R

CS3N120A8R

CS3N120AHR

CS3N120FA9R

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H