l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data: 17.3nC) l Low Reverse transfer capacitances(Typical: 4.3pF) l 100% Single Pulse avalanc.

Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS3N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS3N80A4

CS3N80A4RZ-G

CS3N80A3

CS3N80A3H1-G

CS3N80A8

CS3N80ARH

CS3N80FA9

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N120A0R-G

CS3N120A3R

CS3N120A4R