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Silicon N-Channel Power MOSFET
○R
CS3N80F A9
General Description：
VDSS
800
CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID
3
is obtained by the self-aligned planar Technology which reduce PD(TC=25℃)
30
the conduction loss, improve switching performance and
RDS(ON)Typ
4.0
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which accords
with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS3N80FA9 Datasheet
