* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data: 25nC)
* Low Reverse transfer capacitances(Typical:7.5pF)
* 100% Sing.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS4N80 A3HD1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various .

CS4N80A3HD

CS4N80A3R-G

CS4N80A4HD

CS4N80A4R-G

CS4N60

CS4N60A3HD

CS4N60A3R

CS4N60A3TDY

CS4N60A4HD

CS4N60A4R

CS4N60A4TDY

CS4N60A7HD

CS4N60A8HD