* Fast Switching
* Low ON Resistance(Rdson≤3.8Ω)
* Low Gate Charge (Typical Data:19.8 nC)
* Low Reverse transfer capacitances(Typical:4.4 pF)
* .

Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/d.

CS4N80 A3R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS4N80A3HD

CS4N80A3HD1-G

CS4N80A4HD

CS4N80A4R-G

CS4N60

CS4N60A3HD

CS4N60A3R

CS4N60A3TDY

CS4N60A4HD

CS4N60A4R

CS4N60A4TDY

CS4N60A7HD

CS4N60A8HD