CS55N25FA9R mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
Application.
Power switch circuit of electron ballast and adaptor.
250
V
55
A
50
W
56
mΩ
Absolute（TJ= 25℃ unless otherwise.
CS55N25F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transist.
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