* Fast Switching
* Low ON Resistance(Rdson≤1.5Ω)
* Low Gate Charge (Typical Data: 12.6nC)
* Low Reverse transfer capacitances(Typical:4pF)
* 100.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS5N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS5N50FA9R

CS5N06AE-1

CS5N10A23-G

CS5N10AE-G-1

CS5N10AQ2-G-1

CS5N20A3

CS5N20A4

CS5N20FA9

CS5N60A8H

CS5N60FA9R

CS5N65A3

CS5N65A4

CS5N65A7H