l Fast Switching l Low ON Resistance(Rdson≤230mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applicat.

The package form is DFN3*3-8L, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rds.

CS5N10 AQ2-G-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load s.

CS5N10A23-G

CS5N10AE-G-1

CS5N06AE-1

CS5N20A3

CS5N20A4

CS5N20FA9

CS5N60A8H

CS5N65A3

CS5N65A4

CS5N65A7H

CS5N65A8H

CS5N65FA9H

CS5N70A4

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