l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche .

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS5N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow.

CS5N60A8H

CS5N65A3

CS5N65A4

CS5N65A7H

CS5N65A8H

CS5N65A8R

CS5N65FA9H

CS5N06AE-1

CS5N10A23-G

CS5N10AE-G-1

CS5N10AQ2-G-1

CS5N20A3

CS5N20A4