l Fast Switching l Low ON Resistance(Rdson≤2.8Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanch.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS5N65 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS5N65A8H

CS5N65A3

CS5N65A4

CS5N65A7H

CS5N65FA9H

CS5N60A8H

CS5N60FA9R

CS5N06AE-1

CS5N10A23-G

CS5N10AE-G-1

CS5N10AQ2-G-1

CS5N20A3

CS5N20A4