* Fast Switching
* Low ON Resistance(Rdson≤1.60Ω)
* Low Gate Charge (Typical Data: 26nC)
* Low Reverse transfer capacitances(Typical: 4.5pF)
* 1.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS6N70 A3R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS6N70A3D-G

CS6N70A3D1-G

CS6N70A3H

CS6N70A4D-G

CS6N70A4R-G

CS6N70A8D

CS6N70B3D1-G

CS6N70CRHD

CS6N70FA9D

CS6N70FA9H

CS6N70FB9D

CS6N120A0R-G

CS6N120A8R-G