l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy .

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS6N70 CRHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow.

CS6N70A3D-G

CS6N70A3D1-G

CS6N70A3H

CS6N70A3R-G

CS6N70A4D-G

CS6N70A4R-G

CS6N70A8D

CS6N70B3D1-G

CS6N70FA9D

CS6N70FA9H

CS6N70FB9D

CS6N120A0R-G

CS6N120A8R-G