l Fast Switching l Low ON Resistance(Rdson≤2.3Ω) l Low Gate Charge (Typical Data: 31.1nC) l Low Reverse transfer capacitances(Typical:5.2 pF) l 100% Single Pulse avalanc.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS6N90 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS6N90A8H

CS6N90A0R-G

CS6N90ARH-G

CS6N90ARR

CS6N90B4R-G

CS6N90FA9H

CS6N90FA9R

CS6N120A0R-G

CS6N120A8R-G

CS6N120AHR-G

CS6N120AKR-G

CS6N120FA9R-G

CS6N40A3R