* Fast Switching
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge (Typical Data: 30.1nC)
* Low Reverse transfer capacitances(Typical:6.4pF)
* 1.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS6N90 B4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS6N90A0R-G

CS6N90A8H

CS6N90A8R

CS6N90ARH-G

CS6N90ARR

CS6N90FA9H

CS6N90FA9R

CS6N120A0R-G

CS6N120A8R-G

CS6N120AHR-G

CS6N120AKR-G

CS6N120FA9R-G

CS6N40A3R