l Fast Switching l Low ON Resistance(Rdson≤1.15Ω) l Low Gate Charge (Typical Data:26.5nC) l Low Reverse transfer capacitances(Typical:4.7pF) l 100% Single Pulse avalanch.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS7N70 A4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS7N70A3R1-G

CS7N70ARD

CS7N70FA9R-G

CS7N03AE-1

CS7N10AQ2-1

CS7N60

CS7N60A3R

CS7N60A4R

CS7N60A7HD

CS7N60A8HD

CS7N60A8R

CS7N60FA9HD

CS7N60FA9HDY