HGD09N06A-G mosfet equivalent, silicon n-channel power mosfet.
The package form is TO-252, which accords with the RoHS standard.
VD SS ID PD RD S ( O N)Typ VGS=10V
60
V
55
A
59.
HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load swit.
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