HGD10N04A mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
Applications：
Po.
the package form is TO-252, which accords with
the RoHS standard.
Features：
* Fast Switching
* Low ON Resista.
VDSS
ID（Silicon limited current）
HGD10N04A, the silicon N-channel Enhanced VDMOSFETs, is
ID（Package limited）
obtained by the high density Trench technology which reduce the PD conduction loss, improve switching performance and enhance the avala.
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