HGE055NE4A mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters
Absolute（Ta= 25℃.
VDSS
45
V
HGE055NE4A, the silicon N-channel Enhanced ID
18
A
VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃)
3.1
W
which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4
mΩ
performance and enh.
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