HGE090N06A mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halo.
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters
Absolute（TA= 25℃.
VDSS
60
V
HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID
14
A
is obtained by the high density Trench technology which reduce PD(Ta=25℃)
3.1
W
the conduction loss, improve switching performance and enhance RDS(ON) Typ@Vgs=10V 8.5
.
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