l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected Applications： Pow.

Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDS.

HPU800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

HPU800R750PD-G

HPU600R1K6DN

HPU600R2K3DN

HPU600R2K3DP

HPU600R700DN

HPU600R760MB

HPU600R800DN

HPU650R1K1DN

HPU650R1K3DN

HPU650R1K9DN

HPU650R2K8DN

HPU650R420PC-G

HPU650R420SA