BTC2881FP Datasheet - CYStech

Silicon NPN Epitaxial Planar Transistor

BTC2881FP General Description

* High breakdown voltage, BVCEO≥ 200V * Large continuous collector current capability * Low collector saturation voltage * RoHS compliant package Symbol BTC2881FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Colle.

BTC2881FP Datasheet (190.27 KB)

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BTC2881FP

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CYStech

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190.27 KB

Description:

Silicon npn epitaxial planar transistor.
CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC2881FP BVCEO IC RCESAT(MAX) Spec. No. : C316FP Issued Date : 2010.09.23 Revise.

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BTC2881FP Silicon NPN Epitaxial Planar Transistor CYStech

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BTC2881FP General Description

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