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BTC3097T3 - High Voltage NPN Triple Diffused Planar Transistor

Features

  • High voltage, BVCBO=1600V min. , BVCEO=800V min.
  • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note :.
  • 1. Single Pulse Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800.

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Datasheet Details

Part number BTC3097T3
Manufacturer CYStech
File Size 204.13 KB
Description High Voltage NPN Triple Diffused Planar Transistor
Datasheet download datasheet BTC3097T3 Datasheet
Additional preview pages of the BTC3097T3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 Features • High voltage, BVCBO=1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800 6 1 3 *1 1 10 -55~+150 Unit V V V A A W °C BTC3097T3 CYStek Product Specification CYStech Electronics Corp. Spec. No.
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