BTD1616AM3 Description
CYStech Electronics Corp. 2009.04.01 Revised Date :2014.03.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTD1616AM3 BVCEO IC VCESAT(max) 60V 3A 150mV.
BTD1616AM3 Key Features
- High breakdown voltage, BVCEO≥ 60V
- Large continuous collector current capability
- Low collector saturation voltage
- Pb-free lead plating and halogen-free package