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BTD2150FP - Low Vcesat NPN Epitaxial Planar Transistor

Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB1424FP.
  • Pb-free lead plating package Symbol BTD2150FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Operating Junc.

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Datasheet Details

Part number BTD2150FP
Manufacturer CYStech
File Size 182.24 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150FP BVCEO IC RCESAT Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1424FP • Pb-free lead plating package Symbol BTD2150FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Operating Junction and Storage Temperature Range Note : *1.
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