Datasheet4U Logo Datasheet4U.com

BTD2150AE3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA.
  • Excellent current gain characteristics www. DataSheet4U. com.
  • Complementary to BTB1424AE3 Symbol BTD2150AE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temper.

📥 Download Datasheet

Datasheet Details

Part number BTD2150AE3
Manufacturer Cystech Electonics
File Size 192.90 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150AE3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTD2150FP Low Vcesat NPN Epitaxial Planar Transistor CYStech
BTD2150K3 Low Vcesat NPN Epitaxial Planar Transistor CYStech
BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor CYStech
BTD2118T3 Silicon NPN Epitaxial Planar Transistor CYStech
BTD2195J3 NPN Transistor Cystech Electonics Corp

Other Datasheets by Cystech Electonics

Part Number Description
BTD2150A3 NPN Epitaxial Planar Transistor
BTD2150AD3 NPN Epitaxial Planar Transistor
BTD2150AM3 NPN Epitaxial Planar Transistor
BTD2150AT3 NPN Epitaxial Planar Transistor
BTD2150L3 NPN Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 1/5 BTD2150AE3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA • Excellent current gain characteristics www.DataSheet4U.com • Complementary to BTB1424AE3 Symbol BTD2150AE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%. Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits 80 50 6 3 7 (Note) 1 1.