BTD2150L3 Description
CYStech Electronics Corp. 2004.10.07 Revised Date :2014.09.23 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 BVCEO IC RCESAT (Max) 50V 3A 145mΩ.
BTD2150L3 Key Features
- Low VCE(sat), VCE(sat)= 0.22V (typical), at IC/IB=2A/0.2A
- Excellent current gain characteristics
- plementary to BTB1424L3
- Pb-free lead plating and halogen-free package