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BTD2150L3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)= 0.22V (typical), at IC/IB=2A/0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB1424L3.
  • Pb-free lead plating and halogen-free package Symbol BTD2150L3 Outline SOT-223 B:Base C:Collector E:Emitter Ordering Information Device BTD2150L3-0-T3-X Package SOT-223 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compo.

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Datasheet Details

Part number BTD2150L3
Manufacturer Cystech Electonics
File Size 316.69 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150L3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date :2014.09.23 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 BVCEO IC RCESAT (Max) 50V 3A 145mΩ Features • Low VCE(sat), VCE(sat)= 0.22V (typical), at IC/IB=2A/0.