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BTD2150AT3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA.
  • Excellent current gain characteristics.
  • Complementary to BTB1424AT3.
  • Pb-free lead plating and halogen-free package Symbol BTD2150AT3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD2150AT3-X-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products.

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Datasheet Details

Part number BTD2150AT3
Manufacturer Cystech Electonics
File Size 261.86 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150AT3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150AT3 Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : 2017.05.09 Page No. : 1/6 Features • Low VCE(sat), VCE(sat)=0.