BTD2150AT3 Overview
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150AT3 Spec. 2004.07.01 Revised Date.
BTD2150AT3 Key Features
- Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA
- Excellent current gain characteristics
- plementary to BTB1424AT3
- Pb-free lead plating and halogen-free package