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BTD2150AM3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA.
  • Excellent current gain characteristics.
  • Complementary to BTB1424AM3.
  • Pb-free lead plating package Symbol BTD2150AM3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Ordering Information Device BTD2150AM3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p.

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Datasheet Details

Part number BTD2150AM3
Manufacturer Cystech Electonics
File Size 407.42 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150AM3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2018.05.25 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AM3 BVCEO IC RCE(SAT) typ. 50V 3A 125mΩ Features  Low VCE(sat), VCE(sat)=0.