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BTD2150AD3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA.
  • Excellent current gain characteristics www. DataSheet4U. com.
  • Complementary to BTB1424AD3 Symbol BTD2150AD3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storag.

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Datasheet Details

Part number BTD2150AD3
Manufacturer Cystech Electonics
File Size 183.95 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150AD3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : Page No. : 1/4 BTD2150AD3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics www.DataSheet4U.com • Complementary to BTB1424AD3 Symbol BTD2150AD3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%.