Datasheet4U Logo Datasheet4U.com

BTD2150A3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA.
  • Excellent current gain characteristics.
  • Complementary to BTB1424A3.
  • Pb-free lead plating and halogen-free package Symbol BTD2150A3 Outline TO-92 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD2150A3-X-TB-G BTD2150A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pc.

📥 Download Datasheet

Datasheet Details

Part number BTD2150A3
Manufacturer Cystech Electonics
File Size 332.79 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150A3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 BVCEO IC RCESAT (Typ) 50V 3A 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.