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BTN1053I3 - NPN Epitaxial Planar Transistor

Features

  • Excellent HFE Characteristics up to 1A.
  • Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA.
  • 5A peak pulse current.
  • Pb-free lead plating and halogen-free package Symbol BTN1053I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Ordering Information Device BTN1053I3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS co.

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Datasheet Details

Part number BTN1053I3
Manufacturer CYStech
File Size 302.24 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN1053I3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BTN1053I3 BVCEO IC RCESAT(MAX) 80V 2.5A 150mΩ Features • Excellent HFE Characteristics up to 1A • Low Saturation Voltage, VCE(sat)=0.
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