BTNA45N3 Description
CYStech Electronics Corp. NPN High Voltage Planar Transistor BTNA45N3 BVCEO IC VCESAT Spec. 2011.06.10 Revised Date.
BTNA45N3 Key Features
- High breakdown voltage. (BVCEO=500V)
- Low collector-emitter saturation voltage VCESAT
- High collector current capability IC and ICM
- High collector current gain HFE at high collector current IC
- Low collector output capacitance. (Typ. 5pF at VCB =20V)
- Pb-free lead plating and halogen-free package