High collector current gain HFE at high collector current IC.
Low collector output capacitance. (Typ. 5pF at VCB =20V).
Pb-free lead plating and halogen-free package. Symbol
BTNA45N3
Outline
SOT-23 C
BE
Ordering Information
Device BTNA45N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free pa.
Full PDF Text Transcription for BTNA45N3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BTNA45N3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. NPN High Voltage Planar Transistor BTNA45N3 BVCEO IC VCESAT Spec. No. : C241N3 Issued Date : 2011.06.10 Revised Date : 2017.05.15 Page No. : 1/7...
View more extracted text
41N3 Issued Date : 2011.06.10 Revised Date : 2017.05.15 Page No. : 1/7 500V 150mA 150mV (max) Features • High breakdown voltage. (BVCEO=500V) • Low collector-emitter saturation voltage VCESAT. • High collector current capability IC and ICM. • High collector current gain HFE at high collector current IC. • Low collector output capacitance. (Typ. 5pF at VCB =20V) • Pb-free lead plating and halogen-free package.
BTNA45N3 Datasheet
