• Part: MTB010N06RJ3
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 425.57 KB
Download MTB010N06RJ3 Datasheet PDF
CYStech
MTB010N06RJ3
MTB010N06RJ3 is N-Channel MOSFET manufactured by CYStech.
Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 43A 10.3 mΩ(typ) 15.8 mΩ(typ) Symbol Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB010N06RJ3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C016J3 Issued Date : 2018.04.11 Revised Date : 2018.04.12 Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 4) Continuous Drain Current @TA=70°C, VGS=10V (Note 4) Pulsed Drain Current @ VGS=10V (Note...