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MTB08N04J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB08N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB08N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,.

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Datasheet preview – MTB08N04J3

Datasheet Details

Part number MTB08N04J3
Manufacturer CYStech
File Size 311.51 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB08N04J3 Datasheet
Additional preview pages of the MTB08N04J3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C892J3 Issued Date : 2014.05.29 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB08N04J3 BVDSS ID @VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=5V, ID=10A 40V 60A 5.4mΩ(typ) 9.
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