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CYStech

MTB1D7N03ATH8 Datasheet Preview

MTB1D7N03ATH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2019.11.05
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB1D7N03ATH8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
BVDSS
ID @VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V
90A
1.5 mΩ(typ)
2.1 mΩ(typ)
Symbol
MTB1D7N03ATH8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB1D7N03ATH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13reel
Product rank, zero for no rank products
Product name
MTB1D7N03ATH8
CYStek Product Specification




CYStech

MTB1D7N03ATH8 Datasheet Preview

MTB1D7N03ATH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2019.11.05
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=100C, VGS=10V
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=30A, RG=25Ω
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
30
±20
90
57
20
16
360 *1
77
450
50
20
2.5
1.6
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5 C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3 C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in²copper pad of FR-4 board, t10s; 125C/W when mounted on minimum copper pad.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
30 -
-
1.0 1.9 2.5
V VGS=0V, ID=250μA
V VDS = VGS, ID=250μA
GFS *1
IGSS
-
-
58 -
S VDS =5V, ID=20A
-
±100
nA VGS=±20V
IDSS
RDS(ON) *1
-
-
-
-
-
-
1
25
μA
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=125C
1.5 2.2 mΩ VGS =10V, ID=30A
2.1 4.0 mΩ VGS =4.5V, ID=20A
Dynamic
Ciss - 5385 -
Coss
- 935 -
pF VGS=0V, VDS=15V, f=1MHz
Crss - 854 -
MTB1D7N03ATH8
CYStek Product Specification


Part Number MTB1D7N03ATH8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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