• Part: MTB1D7N03ATH8
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 633.91 KB
Download MTB1D7N03ATH8 Datasheet PDF
CYStech
MTB1D7N03ATH8
MTB1D7N03ATH8 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 90A 1.5 mΩ(typ) 2.1 mΩ(typ) Symbol Outline Pin 1 DFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTB1D7N03ATH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C948H8 Issued Date : 2014.06.06 Revised Date : 2019.11.05 Page No. : 2/9 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V Continuous Drain Current @ TC=100C, VGS=10V Continuous Drain Current @ TA=25C, VGS=10V Continuous Drain Current @ TA=70C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1m H, ID=30A, RG=25Ω TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature...