MTB1D7N03ATH8
MTB1D7N03ATH8 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V 90A 1.5 mΩ(typ) 2.1 mΩ(typ)
Symbol
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTB1D7N03ATH8-0-T6-G
Package DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8 Issued Date : 2014.06.06 Revised Date : 2019.11.05 Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=100C, VGS=10V
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1m H, ID=30A, RG=25Ω
TC=25℃
Total Power Dissipation
TC=100℃ TA=25℃
TA=70℃
Operating Junction and Storage Temperature...