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MTB1D7N03RH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 131A(silicon limit) 84A(package limit) 26.2A 1.2mΩ(typ) 1.9mΩ(typ) Symbol MTB1D7N03RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB1D7N03RH8-0-T6-G Package D.

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Datasheet Details

Part number MTB1D7N03RH8
Manufacturer CYStech
File Size 869.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D7N03RH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C638H8 Issued Date : 2019.05.03 Revised Date : 2020.02.25 Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFET MTB1D7N03RH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 131A(silicon limit) 84A(package limit) 26.2A 1.2mΩ(typ) 1.