Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C638H8 Issued Date : 2019.05.03 Revised Date : 2020.02.25 Page No. : 1/ 11
N-Channel Enhancement Mode Power MOSFET
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V 131A(silicon limit) 84A(package limit) 26.2A 1.2mΩ(typ) 1.9mΩ(typ)
Symbol
G：Gate D：Drain S：Source
Outline
Pin 1
DFN5×6
Pin 1
Ordering Information
Device MTB1D7N03RH8-0-T6-G
Package DFN 5 ×6 (Pb-free lead plating and...