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MTB1D7N03ATH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 90A 1.5 mΩ(typ) 2.1 mΩ(typ) Symbol MTB1D7N03ATH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB1D7N03ATH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade.

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Datasheet Details

Part number MTB1D7N03ATH8
Manufacturer CYStech
File Size 633.91 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D7N03ATH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C948H8 Issued Date : 2014.06.06 Revised Date : 2019.11.05 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 90A 1.5 mΩ(typ) 2.