900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTB4D0N03BQ8 Datasheet Preview

MTB4D0N03BQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB4D0N03BQ8
Spec. No. : C092Q8
Issued Date : 2015.10.05
Revised Date :
Page No. : 1/9
BVDSS
ID @ TA=25°C, VGS=10V
ID @ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=18A
RDS(ON)@VGS=4.5V, ID=10A
30V
17.5A
22.0A
4.2 mΩ(typ)
6.0mΩ(typ)
Description
The MTB4D0N03BQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
Symbol
MTB4D0N03BQ8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB4D0N03BQ8
CYStek Product Specification




CYStech

MTB4D0N03BQ8 Datasheet Preview

MTB4D0N03BQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C092Q8
Issued Date : 2015.10.05
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=17.5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25 °C
Total Power Dissipation
TC=100 °C
TA=25 °C
TA=70 °C
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. 100% tested by conditions of L=0.5mH, IAS=13A, VGS=10V, VDD=15V
*3. Duty cycle 1%
Limits
30
±20
22
13.9
17.5
14.0
88 *1
17.5
153 *2
1.6 *3
5.0
2.0
3.1
2.0
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Rth,j-c
Rth,j-a
25
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
30 -
1.0 -
- 16
--
--
--
- 4.2
- 6.0
-
2.5
-
±100
1
10
6.6
8.3
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=10A
nA VGS=±20V
μA
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=85°C
mΩ
VGS =10V, ID=18A
VGS =4.5V, ID=10A
Dynamic
Qg (VGS=10V) *1, 2
Qg(VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
-
-
-
-
35.1
18.6
4.3
8.9
-
-
-
-
nC VDS=15V,ID=16A, VGS=10V
MTB4D0N03BQ8
CYStek Product Specification


Part Number MTB4D0N03BQ8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
PDF Download

MTB4D0N03BQ8 Datasheet PDF






Similar Datasheet

1 MTB4D0N03BQ8 N-Channel Enhancement Mode Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy