900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTBA0N10Q8 Datasheet Preview

MTBA0N10Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA0N10Q8 BVDSS
ID
RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=4.5V, ID=3A
100V
5A
90mΩ(typ)
94mΩ(typ)
Description
The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free and Halogen-free package
Symbol
MTBA0N10Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTBA0N10Q8
CYStek Product Specification




CYStech

MTBA0N10Q8 Datasheet Preview

MTBA0N10Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
100
±20
5
3.1
20 *1
5
1.25
0.625 *2
3
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
100
1.0
-
-
-
-
-
-
-
-
-
-
1.9
12
-
-
-
90
94
1638
42
28
-
3.0
-
±100
1
25
100
125
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=5A
nA VGS=±20
μA
VDS =80V, VGS =0
VDS =70V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=5A
mΩ VGS =4.5V, ID=3A
pF VGS=0V, VDS=25V, f=1MHz
MTBA0N10Q8
CYStek Product Specification


Part Number MTBA0N10Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
PDF Download

MTBA0N10Q8 Datasheet PDF






Similar Datasheet

1 MTBA0N10Q8 N-Channel Enhancement Mode Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy