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MTBA0N10Q8 - N-Channel Enhancement Mode Power MOSFET

Description

The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free and Halogen-free package Symbol MTBA0N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTBA0N10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C790Q8 Issued Date : 2010.07.23 Revised Date : 2012.05.07 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltag.

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Datasheet Details

Part number MTBA0N10Q8
Manufacturer CYStech
File Size 258.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA0N10Q8 Datasheet
Additional preview pages of the MTBA0N10Q8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C790Q8 Issued Date : 2010.07.23 Revised Date : 2012.05.07 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTBA0N10Q8 BVDSS ID RDS(ON)@VGS=10V, ID=5A RDS(ON)@VGS=4.5V, ID=3A 100V 5A 90mΩ(typ) 94mΩ(typ) Description The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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